@article{89bba2c974164c91a33307ce8c6d3a1b,
title = "Steep switching of In0.18 Al0.82 N/AlN/GaN MIS-HEMT (metal insulator semiconductor high electron mobility transistors) on si for sensor applications",
abstract = "InAlN/Al/GaN high electron mobility transistors (HEMTs) directly on Si with dynamic threshold voltage for steep subthreshold slope (<60 mV/dec) are demonstrated in this study, and attributed to displacement charge transition effects. The material analysis with High-Resolution X-ray Diffraction (HR-XRD) and the relaxation by reciprocal space mapping (RSM) are performed to confirm indium barrier composition and epitaxy quality. The proposed InAlN barrier HEMTs exhibits high ON/OFF ratio with seven magnitudes and a steep threshold swing (SS) is also obtained with SS = 99 mV/dec for forward sweep and SS = 28 mV/dec for reverse sweep. For GaN-based HEMT directly on Si, this study displays outstanding performance with high ON/OFF ratio and SS < 60 mV/dec behaviors.",
keywords = "High-electron-mobility transistor (HEMT), InAlN, Swing, Wafer-scale",
author = "Chen, {Pin Guang} and Chen, {Kuan Ting} and Ming Tang and Wang, {Zheng Ying} and Chou, {Yu Chen} and Lee, {Min Hung}",
note = "Funding Information: Acknowledgments: The authors are grateful for the processing support by the National Nano Device Laboratories (NDL) and Nano Facility Center (NFC), Taiwan. Funding Information: Figure 6. ON/OFF ratio vs. subthreshold swing of GaN-based devices on Si, SiC, and Sapphire substrates. sTuhbisstrsatteusd. yTshhisowstusdSyS <sh6o0wms VSS/d<e6c0o mf IVn/AdelcN obfa rInriAerlNG abNarrMierOGSa-HNE MMOTS-fHirEstMtTim feirsdti retmictely-on-Si. directly-on-Si. 4. Conclusions 4. Conclusions The heterojunction of In0.18Al0.82N and GaN with lattice-match is validated by HR-XRD and RSM The heterojunction of In0.18Al0.82N and GaN with lattice-match is validated by HR-XRD and RSM toconfirmttheo confindiumirm the ibarrierndium bcompositionarrier compositiandon andepitaxyepitaxyqquuaalliittyy..ThThee prpropooposedsed promprisomisinging wafer swafercale scale InAlN/Al/InGAalNN/HAlE/GMaTNHdEirMecTtldyir-eocntl-yS-oi wn-Siti hwistthesetpeespusbutbhthrreesshhoollddssllooppee(S(SS<S6<0m60Vm/deVc)/idsedce)miosndstermateodnstrated in this study and is attributed to dynamic threshold voltage effect. The performance of the InAlN barrier HEMTs exhibits high ON/OFF ratio with seven magnitudes, and a steep SS is also obtained with SS = 99 mV/dec for forward sweep and SS = 28 mV/dec for reverse sweep. For the on-Si device, with SS = 99 mV/dec for forward sweep and SS = 28 mV/dec for reverse sweep. For the on-Si device, this study displays outstanding performance with high ON/OFF ratio and SS < 60 mV/dec behaviors. The steep slope characteristics of InAlN HEMTs growth on a Si substrate is feasible for applications, such as gas, pH, biomedical sensors, etc., and it is beneficial for reducing power consumption and reliability imprAuthoovementr Contributinionthes: PIoT.-G.C.era.designed the overall architecture of InAlN/AlN/GaN MIS-HEMT and contributed to the implementation and deployment of this work. K.-T.C. was mainly involved in preparing the Author Conetxrpiberuimtieonntasl: vPa.l-iGda.Ctio. ndeansidgnpreodcetshsiengovteher arlelsualrtcsh. iMte.Tc.tuwraesoafcIonnAsullNta/nAt floNr /thGisawNorMk.IZS.--HY.WEM. aTndanYd.-Cc.oCn. tributed to the implewmeeren tfaotciuosnedaonndtdhee pelelocytrmicaelnmteoafsuthreismewnot.rMk..-KH..L-T. .hCa.swbeaesnmreaspinolnysibinlev ofolrvperdopinospinrgepthaer irnesgeatrhcehetoxppice,rimental validation apnrdojepcrto acdemsisniinstgratthioen,rfeusnudlitnsg. aMcq.uTi.siwtioans, arecvioenwsinuglttahnet wfoorrktahnids twheo prakp.eZr{\textquoteright}s.-pYr.eWpa.raantiodnY. .-C.C. were focused on the electrical measurement. M.-H.L. has been responsible for proposing the research topic, project administration, Funding: This research was funded by the Ministry of Science and Technology (MOST 107-2218-E-003-004). funding acquisition, reviewing the work and the paper{\textquoteright}s preparation. Acknowledgment: The authors are grateful for the processing support by the National Nano Device Funding: This research was funded by the Ministry of Science and Technology (MOST 107-2218-E-003-004). Publisher Copyright: {\textcopyright} 2018 by the authors. Licensee MDPI, Basel, Switzerland.",
year = "2018",
month = sep,
doi = "10.3390/s18092795",
language = "English",
volume = "18",
journal = "Sensors (Switzerland)",
issn = "1424-8220",
publisher = "Multidisciplinary Digital Publishing Institute (MDPI)",
number = "9",
}