@inproceedings{759876543b424b05ad692c4cd2c16b72,
title = "Steep switch-off of In0.18Al0.82N/AlN/GaN on Si MIS-HEMT",
abstract = "InAlN/Al/GaN HEMT directly on Si for steep subthreshold slope (<60mV/dec) is demonstrated in this study, and is attributed to displacement charge transition effect. The material analysis with High-Resolution X-ray Diffraction (HR-XRD) and the relaxation by reciprocal space mapping (RSM) are performed to confirm Indium barrier composition and epitaxy quality. The proposed InAlN barrier HEMTs exhibits high ON/OFF ratio with 7 magnitudes and a steep SS is also obtained with subthreshold swing (SS) = 99 mV/dec for forward sweep and SS = 28 mV/dec for reverse sweep.",
keywords = "InAlN, high-electron-mobility transistor (HEMT), swing, wafer-scale",
author = "Chen, {P. G.} and Chou, {Y. C.} and Gu, {S. S.} and Hong, {R. C.} and Wang, {Z. Y.} and Chen, {S. Y.} and Liao, {C. Y.} and M. Tang and Liao, {M. H.} and Lee, {M. H.}",
note = "Publisher Copyright: {\textcopyright} 2018 IEEE.; 7th International Symposium on Next-Generation Electronics, ISNE 2018 ; Conference date: 07-05-2018 Through 09-05-2018",
year = "2018",
month = jun,
day = "22",
doi = "10.1109/ISNE.2018.8394720",
language = "English",
series = "Proceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 2018",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "1--2",
booktitle = "Proceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 2018",
}