Steep switch-off of In0.18Al0.82N/AlN/GaN on Si MIS-HEMT

P. G. Chen, Y. C. Chou, S. S. Gu, R. C. Hong, Z. Y. Wang, S. Y. Chen, C. Y. Liao, M. Tang, M. H. Liao, M. H. Lee*

*此作品的通信作者

研究成果: 書貢獻/報告類型會議論文篇章

摘要

InAlN/Al/GaN HEMT directly on Si for steep subthreshold slope (<60mV/dec) is demonstrated in this study, and is attributed to displacement charge transition effect. The material analysis with High-Resolution X-ray Diffraction (HR-XRD) and the relaxation by reciprocal space mapping (RSM) are performed to confirm Indium barrier composition and epitaxy quality. The proposed InAlN barrier HEMTs exhibits high ON/OFF ratio with 7 magnitudes and a steep SS is also obtained with subthreshold swing (SS) = 99 mV/dec for forward sweep and SS = 28 mV/dec for reverse sweep.

原文英語
主出版物標題Proceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 2018
發行者Institute of Electrical and Electronics Engineers Inc.
頁面1-2
頁數2
ISBN(電子)9781538614457
DOIs
出版狀態已發佈 - 2018 六月 22
事件7th International Symposium on Next-Generation Electronics, ISNE 2018 - Taipei, 臺灣
持續時間: 2018 五月 72018 五月 9

出版系列

名字Proceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 2018

會議

會議7th International Symposium on Next-Generation Electronics, ISNE 2018
國家/地區臺灣
城市Taipei
期間2018/05/072018/05/09

ASJC Scopus subject areas

  • 電氣與電子工程
  • 電子、光磁材料
  • 儀器

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