Steep switch-off of In0.18Al0.82N/AlN/GaN on Si MIS-HEMT

P. G. Chen, Y. C. Chou, S. S. Gu, R. C. Hong, Z. Y. Wang, S. Y. Chen, C. Y. Liao, M. Tang, M. H. Liao, M. H. Lee

研究成果: 書貢獻/報告類型會議貢獻

摘要

InAlN/Al/GaN HEMT directly on Si for steep subthreshold slope (<60mV/dec) is demonstrated in this study, and is attributed to displacement charge transition effect. The material analysis with High-Resolution X-ray Diffraction (HR-XRD) and the relaxation by reciprocal space mapping (RSM) are performed to confirm Indium barrier composition and epitaxy quality. The proposed InAlN barrier HEMTs exhibits high ON/OFF ratio with 7 magnitudes and a steep SS is also obtained with subthreshold swing (SS) = 99 mV/dec for forward sweep and SS = 28 mV/dec for reverse sweep.

原文英語
主出版物標題Proceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 2018
發行者Institute of Electrical and Electronics Engineers Inc.
頁面1-2
頁數2
ISBN(電子)9781538614457
DOIs
出版狀態已發佈 - 2018 六月 22
對外發佈Yes
事件7th International Symposium on Next-Generation Electronics, ISNE 2018 - Taipei, 臺灣
持續時間: 2018 五月 72018 五月 9

出版系列

名字Proceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 2018

會議

會議7th International Symposium on Next-Generation Electronics, ISNE 2018
國家臺灣
城市Taipei
期間18/5/718/5/9

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Instrumentation

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  • 引用此

    Chen, P. G., Chou, Y. C., Gu, S. S., Hong, R. C., Wang, Z. Y., Chen, S. Y., Liao, C. Y., Tang, M., Liao, M. H., & Lee, M. H. (2018). Steep switch-off of In0.18Al0.82N/AlN/GaN on Si MIS-HEMT. 於 Proceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 2018 (頁 1-2). (Proceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 2018). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISNE.2018.8394720