@article{dcf9aa6fe6674cbb83da83edbbcc6f27,
title = "Steep Slope and Near Non-Hysteresis of FETs with Antiferroelectric-Like HfZrO for Low-Power Electronics",
abstract = "The antiferroelectricity in HfZrO2 (HZO) annealed at 600°C with an abrupt turn ON of FET characteristics with SSmin=23 mV/dec and SS avg=50 mV/dec over 4 decades of IDS is demonstrated. The near non-hysteresis is achieved with an antiferroelectric-like HZO due to a small remanent polarization and a coercive field. A feasible concept of coupling the antiferroelectric and ferroelectric type HZO are used for low-power electronics and the memory applications, respectively.",
keywords = "ferroelectric, negative capacitance, subthreshold swing",
author = "Lee, {M. H.} and Wei, {Y. T.} and Chu, {K. Y.} and Huang, {J. J.} and Chen, {C. W.} and Cheng, {C. C.} and Chen, {M. J.} and Lee, {H. Y.} and Chen, {Y. S.} and Lee, {L. H.} and Tsai, {M. J.}",
note = "Publisher Copyright: {\textcopyright} 1980-2012 IEEE.",
year = "2015",
month = apr,
day = "1",
doi = "10.1109/LED.2015.2402517",
language = "English",
volume = "36",
pages = "294--296",
journal = "IEEE Electron Device Letters",
issn = "0741-3106",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "4",
}