Steep Slope and Near Non-Hysteresis of FETs with Antiferroelectric-Like HfZrO for Low-Power Electronics

M. H. Lee, Y. T. Wei, K. Y. Chu, J. J. Huang, C. W. Chen, C. C. Cheng, M. J. Chen, H. Y. Lee, Y. S. Chen, L. H. Lee, M. J. Tsai

    研究成果: 雜誌貢獻期刊論文同行評審

    110 引文 斯高帕斯(Scopus)

    摘要

    The antiferroelectricity in HfZrO2 (HZO) annealed at 600°C with an abrupt turn ON of FET characteristics with SSmin=23 mV/dec and SS avg=50 mV/dec over 4 decades of IDS is demonstrated. The near non-hysteresis is achieved with an antiferroelectric-like HZO due to a small remanent polarization and a coercive field. A feasible concept of coupling the antiferroelectric and ferroelectric type HZO are used for low-power electronics and the memory applications, respectively.

    原文英語
    文章編號7038127
    頁(從 - 到)294-296
    頁數3
    期刊IEEE Electron Device Letters
    36
    發行號4
    DOIs
    出版狀態已發佈 - 2015 四月 1

    ASJC Scopus subject areas

    • 電子、光磁材料
    • 電氣與電子工程

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