Stacked GeO/ SrTiOx resistive memory with ultralow resistance currents

C. H. Cheng; Albert Chin; F. S. Yeh

doi:10.1063/1.3549689

Stacked GeO/ SrTiO_x resistive memory with ultralow resistance currents

C. H. Cheng
, Albert Chin
, F. S. Yeh

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

34 引文斯高帕斯（Scopus）

摘要

We report a high performance and low-power operated resistive memory. Using stacked covalent-bond-dielectric GeO_x on metal-oxide SrTiO _x to form the cost-effective Ni/ GeO_x / SrTiO_x /TaN resistive random access memory, ultralow set power of small 1 μW (0.9 μA at 1.2 V), reset power of 13 pW (0.13 nA at 0.1 V), fast 50 ns switching time and good 10⁶ cycling endurance are realized.

原文	英語
文章編號	052905
期刊	Applied Physics Letters
卷	98
發行號	5
DOIs	https://doi.org/10.1063/1.3549689
出版狀態	已發佈 - 2011 1月 31
對外發佈	是

ASJC Scopus subject areas

物理與天文學（雜項）

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10.1063/1.3549689

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abstract = "We report a high performance and low-power operated resistive memory. Using stacked covalent-bond-dielectric GeOx on metal-oxide SrTiO x to form the cost-effective Ni/ GeOx / SrTiOx /TaN resistive random access memory, ultralow set power of small 1 μW (0.9 μA at 1.2 V), reset power of 13 pW (0.13 nA at 0.1 V), fast 50 ns switching time and good 106 cycling endurance are realized.",

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Stacked GeO/ SrTiOx resistive memory with ultralow resistance currents

摘要

ASJC Scopus subject areas

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指紋

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Stacked GeO/ SrTiO_x resistive memory with ultralow resistance currents