Stacked GeO/ SrTiOx resistive memory with ultralow resistance currents

C. H. Cheng, Albert Chin, F. S. Yeh

研究成果: 雜誌貢獻文章

30 引文 斯高帕斯(Scopus)

摘要

We report a high performance and low-power operated resistive memory. Using stacked covalent-bond-dielectric GeOx on metal-oxide SrTiO x to form the cost-effective Ni/ GeOx / SrTiOx /TaN resistive random access memory, ultralow set power of small 1 μW (0.9 μA at 1.2 V), reset power of 13 pW (0.13 nA at 0.1 V), fast 50 ns switching time and good 106 cycling endurance are realized.

原文英語
文章編號052905
期刊Applied Physics Letters
98
發行號5
DOIs
出版狀態已發佈 - 2011 一月 31

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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