We present experimental results on the improved performance and high stable temperature characteristics of the InGaN green light-emitting diode (LED) with pre-trimethlyindium (pre-TMIn) flow treatment. By using pre-TMIn flow treatment, a relatively large radiative coefficient (B = 3.34 × 10-11 cm3 · s-1) corresponding to a 9.2% enhancement in the internal quantum efficiency, as well as a significant reduction of leakage paths for injected carriers, was obtained. Most important, the pre-TMIn flow treatment evidently reduces the dependence of the external quantum efficiency on temperature and efficiency droop of green LEDs. The improvement is thought to be attributable to the preferential formation of In-rich dots upon pre-TMIn flow treatment, which effectively suppresses the trapping of excitons by threading dislocations and the overflowing of injected carriers outside the active regions at elevated temperatures.
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