Stabilizing ferroelectric domain switching of hafnium aluminum oxide using metal nitride electrode engineering

Chien Liu; Yi Chun Tung; Chih Yang Tseng; Wei Chun Wang; Hsuan Han Chen; Tsung Ming Lee; Wu Ching Chou; Zhi Wei Zheng; Chun Hu Cheng; Hsiao Hsuan Hsu

doi:10.1149/2.0041910jss

Stabilizing ferroelectric domain switching of hafnium aluminum oxide using metal nitride electrode engineering

Chien Liu
, Yi Chun Tung
, Chih Yang Tseng
, Wei Chun Wang
, Hsuan Han Chen
, Tsung Ming Lee
, Wu Ching Chou
, Zhi Wei Zheng
, Chun Hu Cheng
, Hsiao Hsuan Hsu

機電工程學系

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

5 引文斯高帕斯（Scopus）

摘要

In this work, we comprehensively investigated the metal-electrode stress engineering on HfAlO metal-ferroelectric-metal capacitor. According to experimental results, we confirm that high-nitrogen tantalum-nitride electrode with good chemical stability not only mitigates the anti-ferroelectric property and gate leakage current, but also improves the wake-up effect and endurance cycling characteristics, which shows the great potential for future applications of low-power ferroelectric memories.

原文	英語
頁（從 - 到）	P553-P556
期刊	ECS Journal of Solid State Science and Technology
卷	8
發行號	10
DOIs	https://doi.org/10.1149/2.0041910jss
出版狀態	已發佈 - 2019

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電子、光磁材料

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10.1149/2.0041910jss

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title = "Stabilizing ferroelectric domain switching of hafnium aluminum oxide using metal nitride electrode engineering",

abstract = "In this work, we comprehensively investigated the metal-electrode stress engineering on HfAlO metal-ferroelectric-metal capacitor. According to experimental results, we confirm that high-nitrogen tantalum-nitride electrode with good chemical stability not only mitigates the anti-ferroelectric property and gate leakage current, but also improves the wake-up effect and endurance cycling characteristics, which shows the great potential for future applications of low-power ferroelectric memories.",

author = "Chien Liu and Tung, \{Yi Chun\} and Tseng, \{Chih Yang\} and Wang, \{Wei Chun\} and Chen, \{Hsuan Han\} and Lee, \{Tsung Ming\} and Chou, \{Wu Ching\} and Zheng, \{Zhi Wei\} and Cheng, \{Chun Hu\} and Hsu, \{Hsiao Hsuan\}",

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doi = "10.1149/2.0041910jss",

language = "English",

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T1 - Stabilizing ferroelectric domain switching of hafnium aluminum oxide using metal nitride electrode engineering

AU - Liu, Chien

AU - Tung, Yi Chun

AU - Tseng, Chih Yang

AU - Wang, Wei Chun

AU - Chen, Hsuan Han

AU - Lee, Tsung Ming

AU - Chou, Wu Ching

AU - Zheng, Zhi Wei

AU - Cheng, Chun Hu

AU - Hsu, Hsiao Hsuan

PY - 2019

Y1 - 2019

N2 - In this work, we comprehensively investigated the metal-electrode stress engineering on HfAlO metal-ferroelectric-metal capacitor. According to experimental results, we confirm that high-nitrogen tantalum-nitride electrode with good chemical stability not only mitigates the anti-ferroelectric property and gate leakage current, but also improves the wake-up effect and endurance cycling characteristics, which shows the great potential for future applications of low-power ferroelectric memories.

AB - In this work, we comprehensively investigated the metal-electrode stress engineering on HfAlO metal-ferroelectric-metal capacitor. According to experimental results, we confirm that high-nitrogen tantalum-nitride electrode with good chemical stability not only mitigates the anti-ferroelectric property and gate leakage current, but also improves the wake-up effect and endurance cycling characteristics, which shows the great potential for future applications of low-power ferroelectric memories.

UR - https://www.scopus.com/pages/publications/85073876055

UR - https://www.scopus.com/pages/publications/85073876055#tab=citedBy

U2 - 10.1149/2.0041910jss

DO - 10.1149/2.0041910jss

M3 - Article

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VL - 8

SP - P553-P556

JO - ECS Journal of Solid State Science and Technology

JF - ECS Journal of Solid State Science and Technology

IS - 10

ER -

Stabilizing ferroelectric domain switching of hafnium aluminum oxide using metal nitride electrode engineering

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