Stabilizing ferroelectric domain switching of hafnium aluminum oxide using metal nitride electrode engineering

Chien Liu; Yi Chun Tung; Chih Yang Tseng; Wei Chun Wang; Hsuan Han Chen; Tsung Ming Lee; Wu Ching Chou; Zhi Wei Zheng; Chun Hu Cheng; Hsiao Hsuan Hsu

doi:10.1149/2.0041910jss

Stabilizing ferroelectric domain switching of hafnium aluminum oxide using metal nitride electrode engineering

Chien Liu, Yi Chun Tung, Chih Yang Tseng, Wei Chun Wang, Hsuan Han Chen, Tsung Ming Lee, Wu Ching Chou, Zhi Wei Zheng, Chun Hu Cheng, Hsiao Hsuan Hsu

機電工程學系

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

5 引文斯高帕斯（Scopus）

摘要

In this work, we comprehensively investigated the metal-electrode stress engineering on HfAlO metal-ferroelectric-metal capacitor. According to experimental results, we confirm that high-nitrogen tantalum-nitride electrode with good chemical stability not only mitigates the anti-ferroelectric property and gate leakage current, but also improves the wake-up effect and endurance cycling characteristics, which shows the great potential for future applications of low-power ferroelectric memories.

原文	英語
頁（從 - 到）	P553-P556
期刊	ECS Journal of Solid State Science and Technology
卷	8
發行號	10
DOIs	https://doi.org/10.1149/2.0041910jss
出版狀態	已發佈 - 2019

ASJC Scopus subject areas

電子、光磁材料

存取文件

10.1149/2.0041910jss

其它文件與鏈接

引用此

@article{08b1aa477a2b45a19d37fcac8964a1c9,

title = "Stabilizing ferroelectric domain switching of hafnium aluminum oxide using metal nitride electrode engineering",

abstract = "In this work, we comprehensively investigated the metal-electrode stress engineering on HfAlO metal-ferroelectric-metal capacitor. According to experimental results, we confirm that high-nitrogen tantalum-nitride electrode with good chemical stability not only mitigates the anti-ferroelectric property and gate leakage current, but also improves the wake-up effect and endurance cycling characteristics, which shows the great potential for future applications of low-power ferroelectric memories.",

author = "Chien Liu and Tung, {Yi Chun} and Tseng, {Chih Yang} and Wang, {Wei Chun} and Chen, {Hsuan Han} and Lee, {Tsung Ming} and Chou, {Wu Ching} and Zheng, {Zhi Wei} and Cheng, {Chun Hu} and Hsu, {Hsiao Hsuan}",

note = "Publisher Copyright: {\textcopyright} 2019 The Electrochemical Society.",

year = "2019",

doi = "10.1149/2.0041910jss",

language = "English",

volume = "8",

pages = "P553--P556",

journal = "ECS Journal of Solid State Science and Technology",

issn = "2162-8769",

publisher = "Electrochemical Society, Inc.",

number = "10",

}

TY - JOUR

T1 - Stabilizing ferroelectric domain switching of hafnium aluminum oxide using metal nitride electrode engineering

AU - Liu, Chien

AU - Tung, Yi Chun

AU - Tseng, Chih Yang

AU - Wang, Wei Chun

AU - Chen, Hsuan Han

AU - Lee, Tsung Ming

AU - Chou, Wu Ching

AU - Zheng, Zhi Wei

AU - Cheng, Chun Hu

AU - Hsu, Hsiao Hsuan

PY - 2019

Y1 - 2019

N2 - In this work, we comprehensively investigated the metal-electrode stress engineering on HfAlO metal-ferroelectric-metal capacitor. According to experimental results, we confirm that high-nitrogen tantalum-nitride electrode with good chemical stability not only mitigates the anti-ferroelectric property and gate leakage current, but also improves the wake-up effect and endurance cycling characteristics, which shows the great potential for future applications of low-power ferroelectric memories.

AB - In this work, we comprehensively investigated the metal-electrode stress engineering on HfAlO metal-ferroelectric-metal capacitor. According to experimental results, we confirm that high-nitrogen tantalum-nitride electrode with good chemical stability not only mitigates the anti-ferroelectric property and gate leakage current, but also improves the wake-up effect and endurance cycling characteristics, which shows the great potential for future applications of low-power ferroelectric memories.

UR - http://www.scopus.com/inward/record.url?scp=85073876055&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85073876055&partnerID=8YFLogxK

U2 - 10.1149/2.0041910jss

DO - 10.1149/2.0041910jss

M3 - Article

AN - SCOPUS:85073876055

SN - 2162-8769

VL - 8

SP - P553-P556

JO - ECS Journal of Solid State Science and Technology

JF - ECS Journal of Solid State Science and Technology

IS - 10

ER -

Stabilizing ferroelectric domain switching of hafnium aluminum oxide using metal nitride electrode engineering

摘要

ASJC Scopus subject areas

存取文件

其它文件與鏈接

指紋

引用此