Spontaneous nanostructural island formation and layer-to-island mass transport in Ge layers on Si(111) surfaces

Amal K. Das, S. K. Ghose, B. N. Dev, G. Kuri, T. R. Yang

研究成果: 雜誌貢獻期刊論文同行評審

25 引文 斯高帕斯(Scopus)

摘要

We have deposited Ge on Br-passivated Si(111) surfaces under high vacuum (HV) conditions at room temperature (RT). Ge has grown in a layer-plus-island growth mode. Atomic force microscopy (AFM) measurements on the as-deposited samples show the formation of nanostructural islands. On a 500 °C-annealed sample, the size and the density of islands increase. High resolution X-ray diffraction (HRXRD) and ion channeling experiments show the lack of epitaxial growth. However, Raman spectroscopy measurements show the polycrystallinity of the Ge layer. X-ray reflectivity (XRR) and Raman spectroscopy results show that the Ge/Si interface is sharp for the as-deposited layer and there is no significant intermixing even in the annealed samples. AFM, XRR and Raman spectroscopy results, taken together, indicate mass transport from the Ge layer to Ge islands. The temperature dependence of this mass transfer provides effective activation energy of 0.45±0.04 eV.

原文英語
頁(從 - 到)260-270
頁數11
期刊Applied Surface Science
165
發行號4
DOIs
出版狀態已發佈 - 2000 十月 2

ASJC Scopus subject areas

  • 化學 (全部)
  • 凝聚態物理學
  • 物理與天文學 (全部)
  • 表面和介面
  • 表面、塗料和薄膜

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