Spin-valve transistor with a NP junction

Y. W. Huang; C. K. Lo; Y. D. Yao

doi:10.1016/j.jmmm.2006.02.018

Spin-valve transistor with a NP junction

Y. W. Huang^*
, C. K. Lo
, Y. D. Yao

^*此作品的通信作者

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

摘要

A 0.5 um-wide spin-valve transistor has been successfully made by a standard lift-off process using electron beam lithography. This spin-valve transistor consists (SVT) of a pseudo-spin-valve emitter, a metal base, and a p-n barrier collector. At 77 K, the collector current changed from 714 nA at magnetically parallel alignments of the emitter magnetic moments to 8 nA at magnetically anti-parallel alignments. The magnetocurrent ratio was 8600%. The corresponding transfer ratio was 2E-4. These results are useful for the research of the fabrication of the sub-micron size SVT.

原文	英語
頁（從 - 到）	e279-e281
期刊	Journal of Magnetism and Magnetic Materials
卷	304
發行號	1
DOIs	https://doi.org/10.1016/j.jmmm.2006.02.018
出版狀態	已發佈 - 2006 9月
對外發佈	是

ASJC Scopus subject areas

電子、光磁材料
凝聚態物理學

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10.1016/j.jmmm.2006.02.018

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@article{271d7830da894282852f1dc4112d4922,

title = "Spin-valve transistor with a NP junction",

abstract = "A 0.5 um-wide spin-valve transistor has been successfully made by a standard lift-off process using electron beam lithography. This spin-valve transistor consists (SVT) of a pseudo-spin-valve emitter, a metal base, and a p-n barrier collector. At 77 K, the collector current changed from 714 nA at magnetically parallel alignments of the emitter magnetic moments to 8 nA at magnetically anti-parallel alignments. The magnetocurrent ratio was 8600\%. The corresponding transfer ratio was 2E-4. These results are useful for the research of the fabrication of the sub-micron size SVT.",

keywords = "Magneto-current, Spin transistor, p-n junction",

author = "Huang, \{Y. W.\} and Lo, \{C. K.\} and Yao, \{Y. D.\}",

note = "Funding Information: The authors would like to thank the technical support from the Nano Technology Research Center (NTRC), ITRI. This work was supported by the Academia Sinica and the National Science Council of Taiwan under Grants No. NSC93-2112-M-002-031.",

year = "2006",

month = sep,

doi = "10.1016/j.jmmm.2006.02.018",

language = "English",

volume = "304",

pages = "e279--e281",

journal = "Journal of Magnetism and Magnetic Materials",

issn = "0304-8853",

publisher = "Elsevier BV",

number = "1",

}

TY - JOUR

T1 - Spin-valve transistor with a NP junction

AU - Huang, Y. W.

AU - Lo, C. K.

AU - Yao, Y. D.

N1 - Funding Information: The authors would like to thank the technical support from the Nano Technology Research Center (NTRC), ITRI. This work was supported by the Academia Sinica and the National Science Council of Taiwan under Grants No. NSC93-2112-M-002-031.

PY - 2006/9

Y1 - 2006/9

N2 - A 0.5 um-wide spin-valve transistor has been successfully made by a standard lift-off process using electron beam lithography. This spin-valve transistor consists (SVT) of a pseudo-spin-valve emitter, a metal base, and a p-n barrier collector. At 77 K, the collector current changed from 714 nA at magnetically parallel alignments of the emitter magnetic moments to 8 nA at magnetically anti-parallel alignments. The magnetocurrent ratio was 8600%. The corresponding transfer ratio was 2E-4. These results are useful for the research of the fabrication of the sub-micron size SVT.

AB - A 0.5 um-wide spin-valve transistor has been successfully made by a standard lift-off process using electron beam lithography. This spin-valve transistor consists (SVT) of a pseudo-spin-valve emitter, a metal base, and a p-n barrier collector. At 77 K, the collector current changed from 714 nA at magnetically parallel alignments of the emitter magnetic moments to 8 nA at magnetically anti-parallel alignments. The magnetocurrent ratio was 8600%. The corresponding transfer ratio was 2E-4. These results are useful for the research of the fabrication of the sub-micron size SVT.

KW - Magneto-current

KW - Spin transistor

KW - p-n junction

UR - https://www.scopus.com/pages/publications/33747079602

UR - https://www.scopus.com/pages/publications/33747079602#tab=citedBy

U2 - 10.1016/j.jmmm.2006.02.018

DO - 10.1016/j.jmmm.2006.02.018

M3 - Article

AN - SCOPUS:33747079602

SN - 0304-8853

VL - 304

SP - e279-e281

JO - Journal of Magnetism and Magnetic Materials

JF - Journal of Magnetism and Magnetic Materials

IS - 1

ER -

Spin-valve transistor with a NP junction

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