Spin-valve transistor with a NP junction

Y. W. Huang, C. K. Lo, Y. D. Yao

研究成果: 雜誌貢獻期刊論文同行評審

摘要

A 0.5 um-wide spin-valve transistor has been successfully made by a standard lift-off process using electron beam lithography. This spin-valve transistor consists (SVT) of a pseudo-spin-valve emitter, a metal base, and a p-n barrier collector. At 77 K, the collector current changed from 714 nA at magnetically parallel alignments of the emitter magnetic moments to 8 nA at magnetically anti-parallel alignments. The magnetocurrent ratio was 8600%. The corresponding transfer ratio was 2E-4. These results are useful for the research of the fabrication of the sub-micron size SVT.

原文英語
頁(從 - 到)e279-e281
期刊Journal of Magnetism and Magnetic Materials
304
發行號1
DOIs
出版狀態已發佈 - 2006 九月

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

指紋 深入研究「Spin-valve transistor with a NP junction」主題。共同形成了獨特的指紋。

引用此