Spin-valve transistor

Y. W. Huang, C. K. Lo, Y. D. Yao, L. C. Hsieh, J. H. Huang

研究成果: 雜誌貢獻文章

4 引文 斯高帕斯(Scopus)

摘要

A spin transistor consisting of a metallic pseudo-spin-valve emitter, a copper base, and a p-n junction collector was prepared on a Si(100) wafer. This spin transistor can provide high magnetocurrent output, high magnetocurrent variation, and high transfer ratio. The common collector configuration with an emitter bias of 5.12 V at 77 K gives a large magnetocurrent variation of more than 95.5 μA in the collector, and the change is more than 3400% with a transfer ratio of 2.59× 10-3. At room temperature, these changes go down to 98.3 μA and 55.3%, respectively, and the transfer ratio rises to 5.98× 10-3. The high performance of this spin-valve transistor is due to the use of a p-n junction as an energy barrier to select spin electrons.

原文英語
文章編號10D504
期刊Journal of Applied Physics
97
發行號10
DOIs
出版狀態已發佈 - 2005 五月 15

    指紋

ASJC Scopus subject areas

  • Physics and Astronomy(all)

引用此

Huang, Y. W., Lo, C. K., Yao, Y. D., Hsieh, L. C., & Huang, J. H. (2005). Spin-valve transistor. Journal of Applied Physics, 97(10), [10D504]. https://doi.org/10.1063/1.1852318