Spin transistor for magnetic recording

C. K. Lo*, Y. W. Huang, Y. D. Yao, D. R. Huang, J. H. Huang


研究成果: 雜誌貢獻期刊論文同行評審

2 引文 斯高帕斯(Scopus)


In this paper, we demonstrate high-performance giant magnetoresistive spin transistor (GMRST) and magnetotunneling resistive spin transistor (MTRST) which could be used as magnetic pickup head and magnetoresistive random access memory (MRAM). This kind of spin device is based on the technologies of giant magnetoresistance (GMR) and tunneling magnetoresistance (TMR) effects together with a p-n junction. The junction is used as a potential barrier to select spin electrons. In case of GMRST the collector current, IC, varies from 464 μA at magnetically parallel state to 309 μA at magnetically antiparallel state and gives a percentage change of about 50% at room temperature. As for the MTRST, the change of IC is about 45% at room temperature with current varying from 2.9 to 4.2 μA. Memory effect, which is the intrinsic behavior of magnetic materials, is also demonstrated.

頁(從 - 到)892-895
期刊IEEE Transactions on Magnetics
出版狀態已發佈 - 2005 2月

ASJC Scopus subject areas

  • 電子、光磁材料
  • 電氣與電子工程


深入研究「Spin transistor for magnetic recording」主題。共同形成了獨特的指紋。