In this paper, we demonstrate high-performance giant magnetoresistive spin transistor (GMRST) and magnetotunneling resistive spin transistor (MTRST) which could be used as magnetic pickup head and magnetoresistive random access memory (MRAM). This kind of spin device is based on the technologies of giant magnetoresistance (GMR) and tunneling magnetoresistance (TMR) effects together with a p-n junction. The junction is used as a potential barrier to select spin electrons. In case of GMRST the collector current, IC, varies from 464 μA at magnetically parallel state to 309 μA at magnetically antiparallel state and gives a percentage change of about 50% at room temperature. As for the MTRST, the change of IC is about 45% at room temperature with current varying from 2.9 to 4.2 μA. Memory effect, which is the intrinsic behavior of magnetic materials, is also demonstrated.
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