摘要
We analyze the electrical injection of spin-polarized electrons into a (GaIn) AsGaAs light-emitting diode. Using an FeTb multilayer structure with perpendicular magnetic anisotropy and a reverse-biased Schottky contact, we demonstrate spin injection even in remanence between 90 and 260 K. The maximum degree of circular polarization of the emitted light is 0.75% at 90 K.
| 原文 | 英語 |
|---|---|
| 文章編號 | 073907 |
| 期刊 | Journal of Applied Physics |
| 卷 | 99 |
| 發行號 | 7 |
| DOIs | |
| 出版狀態 | 已發佈 - 2006 4月 |
| 對外發佈 | 是 |
ASJC Scopus subject areas
- 一般物理與天文學
指紋
深入研究「Spin injection light-emitting diode with vertically magnetized ferromagnetic metal contacts」主題。共同形成了獨特的指紋。引用此
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