Spin injection light-emitting diode with vertically magnetized ferromagnetic metal contacts

N. C. Gerhardt*, S. Hövel, C. Brenner, M. R. Hofmann, F. Y. Lo, D. Reuter, A. D. Wieck, E. Schuster, W. Keune, S. Halm, G. Bacher, K. Westerholt

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

26 引文 斯高帕斯(Scopus)

摘要

We analyze the electrical injection of spin-polarized electrons into a (GaIn) AsGaAs light-emitting diode. Using an FeTb multilayer structure with perpendicular magnetic anisotropy and a reverse-biased Schottky contact, we demonstrate spin injection even in remanence between 90 and 260 K. The maximum degree of circular polarization of the emitted light is 0.75% at 90 K.

原文英語
文章編號073907
期刊Journal of Applied Physics
99
發行號7
DOIs
出版狀態已發佈 - 2006 4月
對外發佈

ASJC Scopus subject areas

  • 一般物理與天文學

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