@inproceedings{393c3256dcc54477a3ef949ce6655e49,
title = "Size-dependent trapping effect in nano-dot non-volatile memory",
abstract = "We report a flash memory using deep traps nano-dot formed in ZrON charge trapping layers by As+ implantation to improve the device performance of MONOS CTF device. The TaN-[SiO2-LaAlO3]-[As +-implanted ZrON]-[LaAlO3-SiO2]-Si device shows a 6 nm ENT, a large initial memory window of 9.8 V, a 10-year extrapolated retention window of 3.6 V at 85°C, and an endurance window of 5.1 V after 105 cycles under fast 100 μs and low ±16 V program/erase. The performance of As+-implanted ZrON is significantly better than that of stacked Si3N4/Ir-dot/HfON device with poor thickness scaling due to excess Ir metal dot.",
author = "Tsai, {C. Y.} and Cheng, {C. H.} and Chang, {T. Y.} and Chou, {K. Y.} and Albert Chin and Yeh, {F. S.}",
year = "2011",
doi = "10.1149/1.3633028",
language = "English",
isbn = "9781566779036",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "3",
pages = "121--132",
booktitle = "Physics and Technology of High-k Materials 9",
edition = "3",
note = "9th International Symposium on High Dielectric Constant and Other Dielectric Materials for Nanoelectronics and Photonics - 220th ECS Meeting ; Conference date: 10-10-2011 Through 12-10-2011",
}