Size-dependent trapping effect in nano-dot non-volatile memory

C. Y. Tsai, C. H. Cheng, T. Y. Chang, K. Y. Chou, Albert Chin, F. S. Yeh

研究成果: 書貢獻/報告類型會議貢獻

1 引文 斯高帕斯(Scopus)

摘要

We report a flash memory using deep traps nano-dot formed in ZrON charge trapping layers by As + implantation to improve the device performance of MONOS CTF device. The TaN-[SiO 2-LaAlO 3]-[As +-implanted ZrON]-[LaAlO 3-SiO 2]-Si device shows a 6 nm ENT, a large initial memory window of 9.8 V, a 10-year extrapolated retention window of 3.6 V at 85°C, and an endurance window of 5.1 V after 10 5 cycles under fast 100 μs and low ±16 V program/erase. The performance of As +-implanted ZrON is significantly better than that of stacked Si 3N 4/Ir-dot/HfON device with poor thickness scaling due to excess Ir metal dot.

原文英語
主出版物標題Physics and Technology of High-k Materials 9
頁面121-132
頁數12
版本3
DOIs
出版狀態已發佈 - 2011 十二月 1
事件9th International Symposium on High Dielectric Constant and Other Dielectric Materials for Nanoelectronics and Photonics - 220th ECS Meeting - Boston, MA, 美国
持續時間: 2011 十月 102011 十月 12

出版系列

名字ECS Transactions
號碼3
41
ISSN(列印)1938-5862
ISSN(電子)1938-6737

其他

其他9th International Symposium on High Dielectric Constant and Other Dielectric Materials for Nanoelectronics and Photonics - 220th ECS Meeting
國家美国
城市Boston, MA
期間11/10/1011/10/12

ASJC Scopus subject areas

  • Engineering(all)

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    Tsai, C. Y., Cheng, C. H., Chang, T. Y., Chou, K. Y., Chin, A., & Yeh, F. S. (2011). Size-dependent trapping effect in nano-dot non-volatile memory. 於 Physics and Technology of High-k Materials 9 (3 編輯, 頁 121-132). (ECS Transactions; 卷 41, 編號 3). https://doi.org/10.1149/1.3633028