Single crystalline silicene consist of various superstructures using a flexible ultrathin Ag(111) template on Si(111)

Hung Chang Hsu, Yi Hung Lu, Tai Lung Su, Wen Chin Lin, Tsu Yi Fu

研究成果: 雜誌貢獻期刊論文同行評審

4 引文 斯高帕斯(Scopus)

摘要

Using scanning tunneling microscopy, we studied the formation of silicene on an ultrathin Ag(111) film with a thickness of 6-12 monolayers, which was prepared on a Si(111) substrate. A low-energy electron diffraction pattern with an oval spot indicated that the ultrathin Ag(111) film is more disordered than the single-crystal Ag(111). After Si epitaxy growth, we still measured the classical 4 ×4, √13 ×√13, and 2√3 ×2√3 silicene superstructures, which are the same as the silicene superstructure on single-crystal Ag(111). Growing silicene on a single-crystal Ag(111) bulk usually results in the formation of a defect boundary due to the inconsistent orientation of various superstructures. By comparing the angles and boundary conditions between various silicene superstructures on the ultrathin film and single-crystal Ag(111), we discovered that a consistent orientation of various superstructures without obvious boundary defects formed on the ultrathin Ag(111) film. The results indicated single crystalline silicene formation, which was attributed to the domain rotation and lateral shift of the disordered ultrathin Ag(111) film.

原文英語
文章編號075004
期刊Semiconductor Science and Technology
33
發行號7
DOIs
出版狀態已發佈 - 2018 五月 30

ASJC Scopus subject areas

  • 電子、光磁材料
  • 凝聚態物理學
  • 電氣與電子工程
  • 材料化學

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