@inproceedings{ee4981c3db67449196983c7f699383bd,
title = "Simultaneously enhancing internal and extraction efficiencies of GaN-based light emitting diodes via chemical-wet-etching patterned-sapphire-substrate (CWE-PSS)",
abstract = "We report a chemical-wet-etching patterned-sapphire-substrate (CWE-PSS) that simultaneously enhances internal quantum efficiency and light extraction efficiency of gallium nitride based light-emitting-diode (LED). According to transmission electron microscopy (TEM) images, the threading dislocations penetrating into active region was dramatically reduced in the CWE-PSS structure compared to the planar sapphire substrate, i.e. enhancement of internal quantum efficiency. And according to the measurement of angular dependent diffraction power, CWE-PSS also serves as a diffraction grating which diffracts guided light into escaping cones, further improving ligh: extraction efficiency of LED device.",
author = "Lee, {Ya Ju} and Chiu, {C. H.} and Kuo, {H. C.} and Lu, {T. C.} and Wang, {S. C.} and Ng, {Kar Wai} and Lau, {Kei May} and Yang, {Zu Po} and Chang, {Allan S.P.} and Lin, {Shawn Yu}",
year = "2007",
doi = "10.1149/1.2783876",
language = "English",
isbn = "9781566775717",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "5",
pages = "225--230",
booktitle = "ECS Transactions - 47th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS 47) and the 8th Symposium on Wide Bandgap Semiconductor Materials and Devices",
edition = "5",
note = "47th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS 47) and the 8th Symposium on Wide Bandgap Semiconductor Materials and Devices - 212th ECS Meeting ; Conference date: 07-10-2007 Through 12-10-2007",
}