Simultaneously enhancing internal and extraction efficiencies of GaN-based light emitting diodes via chemical-wet-etching patterned-sapphire-substrate (CWE-PSS)

Ya Ju Lee, C. H. Chiu, H. C. Kuo, T. C. Lu, S. C. Wang, Kar Wai Ng, Kei May Lau, Zu Po Yang, Allan S.P. Chang, Shawn Yu Lin

研究成果: 書貢獻/報告類型會議貢獻

1 引文 斯高帕斯(Scopus)

摘要

We report a chemical-wet-etching patterned-sapphire-substrate (CWE-PSS) that simultaneously enhances internal quantum efficiency and light extraction efficiency of gallium nitride based light-emitting-diode (LED). According to transmission electron microscopy (TEM) images, the threading dislocations penetrating into active region was dramatically reduced in the CWE-PSS structure compared to the planar sapphire substrate, i.e. enhancement of internal quantum efficiency. And according to the measurement of angular dependent diffraction power, CWE-PSS also serves as a diffraction grating which diffracts guided light into escaping cones, further improving ligh: extraction efficiency of LED device.

原文英語
主出版物標題ECS Transactions - 47th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS 47) and the 8th Symposium on Wide Bandgap Semiconductor Materials and Devices
頁面225-230
頁數6
版本5
DOIs
出版狀態已發佈 - 2007 十二月 1
事件47th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS 47) and the 8th Symposium on Wide Bandgap Semiconductor Materials and Devices - 212th ECS Meeting - Washington, DC, 美国
持續時間: 2007 十月 72007 十月 12

出版系列

名字ECS Transactions
號碼5
11
ISSN(列印)1938-5862
ISSN(電子)1938-6737

其他

其他47th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS 47) and the 8th Symposium on Wide Bandgap Semiconductor Materials and Devices - 212th ECS Meeting
國家美国
城市Washington, DC
期間07/10/707/10/12

ASJC Scopus subject areas

  • Engineering(all)

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  • 引用此

    Lee, Y. J., Chiu, C. H., Kuo, H. C., Lu, T. C., Wang, S. C., Ng, K. W., Lau, K. M., Yang, Z. P., Chang, A. S. P., & Lin, S. Y. (2007). Simultaneously enhancing internal and extraction efficiencies of GaN-based light emitting diodes via chemical-wet-etching patterned-sapphire-substrate (CWE-PSS). 於 ECS Transactions - 47th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS 47) and the 8th Symposium on Wide Bandgap Semiconductor Materials and Devices (5 編輯, 頁 225-230). (ECS Transactions; 卷 11, 編號 5). https://doi.org/10.1149/1.2783876