TY - GEN
T1 - Simulation of Poly-Silicon Thin Film Transistors with Negative Capacitance Effect
AU - Shang, Zong Wei
AU - Ma, Jun
AU - Liu, Wei Dong
AU - Zheng, Zhi Wei
AU - Cheng, Chun Hu
N1 - Publisher Copyright:
© 2019 IEEE.
PY - 2019/10
Y1 - 2019/10
N2 - In this work, we investigated the negative capacitance (NC) effect of ferroelectric HfAlO on the poly-silicon thin film transistor devices using high-\kappa HfO2 gate insulator by simulation. Excellent performances were achieved, including a high on-state drive current, a high Ion/Ioff of \gt10{7} and a low subthreshold swing of 58 mV/dec. These enhanced performances were related to the strong ferroelectric polarization inducing NC effect to obtain excellent gate controllability.
AB - In this work, we investigated the negative capacitance (NC) effect of ferroelectric HfAlO on the poly-silicon thin film transistor devices using high-\kappa HfO2 gate insulator by simulation. Excellent performances were achieved, including a high on-state drive current, a high Ion/Ioff of \gt10{7} and a low subthreshold swing of 58 mV/dec. These enhanced performances were related to the strong ferroelectric polarization inducing NC effect to obtain excellent gate controllability.
KW - negative capacitance effect
KW - poly-silicon
KW - thin film transistor
UR - http://www.scopus.com/inward/record.url?scp=85075640672&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85075640672&partnerID=8YFLogxK
U2 - 10.1109/ISNE.2019.8896500
DO - 10.1109/ISNE.2019.8896500
M3 - Conference contribution
AN - SCOPUS:85075640672
T3 - 2019 8th International Symposium on Next Generation Electronics, ISNE 2019
BT - 2019 8th International Symposium on Next Generation Electronics, ISNE 2019
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 8th International Symposium on Next Generation Electronics, ISNE 2019
Y2 - 9 October 2019 through 10 October 2019
ER -