Simulation of Poly-Silicon Thin Film Transistors with Negative Capacitance Effect

Zong Wei Shang, Jun Ma, Wei Dong Liu, Zhi Wei Zheng, Chun Hu Cheng

研究成果: 書貢獻/報告類型會議貢獻

摘要

In this work, we investigated the negative capacitance (NC) effect of ferroelectric HfAlO on the poly-silicon thin film transistor devices using high-\kappa HfO2 gate insulator by simulation. Excellent performances were achieved, including a high on-state drive current, a high Ion/Ioff of \gt10{7} and a low subthreshold swing of 58 mV/dec. These enhanced performances were related to the strong ferroelectric polarization inducing NC effect to obtain excellent gate controllability.

原文英語
主出版物標題2019 8th International Symposium on Next Generation Electronics, ISNE 2019
發行者Institute of Electrical and Electronics Engineers Inc.
ISBN(電子)9781728120621
DOIs
出版狀態已發佈 - 2019 十月
事件8th International Symposium on Next Generation Electronics, ISNE 2019 - Zhengzhou, 中国
持續時間: 2019 十月 92019 十月 10

出版系列

名字2019 8th International Symposium on Next Generation Electronics, ISNE 2019

會議

會議8th International Symposium on Next Generation Electronics, ISNE 2019
國家中国
城市Zhengzhou
期間19/10/919/10/10

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Instrumentation

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