Short channel effect improved strained-Si:C-source/drain PMOSFETs

INIS

• carbon 100%
• precipitation 33%
• surfaces 33%
• devices 33%
• layers 33%
• diffusion 33%
• speed 33%
• high temperature 33%
• suppression 33%
• x-ray diffraction 33%
• reduction 33%
• silicon carbides 33%
• traps 33%
• junctions 33%
• buffers 33%
• atomic force microscopy 33%
• boron 33%
• germanium silicides 33%
• interstitials 33%

Earth and Planetary Sciences

• Carbon 100%
• Drain 100%
• Incorporation 66%
• Diffusion 33%
• High Temperature 33%
• Boron 33%
• High Speed 33%
• Retarding 33%
• Trap 33%
• Microscope 33%
• X Ray Diffraction 33%

Engineering

• Precipitation 50%
• Shallow Junction 50%
• Si Surface 50%
• C Process 50%