Short channel effect improved strained-Si:C-source/drain PMOSFETs

M. H. Lee, S. T. Chang, S. Maikap, K. W. Shen, W. C. Wang

研究成果: 雜誌貢獻文章

4 引文 斯高帕斯(Scopus)

摘要

The suppression of short channel effect in strained-Si surface channel PMOSFET with carbon incorporation on relaxed SiGe buffers is demonstrated. The lateral diffusion of boron from source/drain into the channels is retarded by a reduction of interstitial formation due to carbon incorporation in the strained-Si layer. It is necessary to avoid the high temperature (>900 °C) process for SiC precipitations as trap centers which are observed by atomic force microscope and X-ray diffraction. An incorporated carbon in the source/drain is not only being stressor but also improves short channel effect for extremely shallow junctions, and makes it possible to have high speed devices.

原文英語
頁(從 - 到)6144-6146
頁數3
期刊Applied Surface Science
254
發行號19
DOIs
出版狀態已發佈 - 2008 七月 30

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

指紋 深入研究「Short channel effect improved strained-Si:C-source/drain PMOSFETs」主題。共同形成了獨特的指紋。

  • 引用此