Self-regulating and diameter-selective growth of GaN nanowires

Chin Kuei Kuo, Chih Wei Hsu, Chien Ting Wu, Zon Huang Lan, Chung Yuan Mou, Chia Chun Chen, Ying Jay Yang, Li Chyong Chen, Kuei Hsien Chen*


研究成果: 雜誌貢獻期刊論文同行評審

23 引文 斯高帕斯(Scopus)


We report diameter-selective growth of GaN nanowires (NWs) by using mono-dispersed Au nanoparticles (NPs) on a ligand-modified Si substrate. The thiol-terminal silane was found to be effective in producing well-dispersed Au NPs in low density on Si substrates so that the agglomeration of Au NPs during growth could be avoided. The resultant GaN NWs exhibited a narrow diameter distribution and their mean diameter was always larger than, while keeping a deterministic relation with, the size of the Au NPs from which they were grown. A self-regulating steady growth model is proposed to account for the size-control process.

頁(從 - 到)S332-S337
出版狀態已發佈 - 2006 5月 19

ASJC Scopus subject areas

  • 生物工程
  • 一般化學
  • 一般材料科學
  • 材料力學
  • 機械工業
  • 電氣與電子工程


深入研究「Self-regulating and diameter-selective growth of GaN nanowires」主題。共同形成了獨特的指紋。