A novel approach for fabricating large-area crack-filled grapheme (CFG) films was reported, of which the intrinsic topological cracks in graphene are filled with Au nanoparticles through a simple reduction-oxidation reaction between the Cu substrate and the metal precursor solution. The CFG films were employed as a transparent electrode in fabricating graphene/Si Schottky junction solar cells. The CFG films exhibited superior electrical properties as a transparent electrode, showing substantial improvement in both the sheet resistance and series contact resistance compared with conventional as-grown grapheme films. A high-performance graphene/Si Schottky junction solar cell based on the CFG film showed a promising PCE of 12.3% and a high FF close to 0.8 because of the low series resistance at the heterojunction between graphene and a semiconductor. The CFG films in which the graphene cracks were filled by Au nanoparticles have immense potential for integration into the future industrial production of large-area, high-quality, graphene-based transparent electrodes or electronic devices.
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