Self-assembled nanorings in Si-capped Ge quantum dots on (001)Si

S. W. Lee; L. J. Chen; P. S. Chen; M. J. Tsai; C. W. Liu; T. Y. Chien; C. T. Chia

doi:10.1063/1.1635073

Self-assembled nanorings in Si-capped Ge quantum dots on (001)Si

S. W. Lee^*, L. J. Chen, P. S. Chen, M. J. Tsai, C. W. Liu, T. Y. Chien, C. T. Chia

^*此作品的通信作者

物理學系

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

55 引文斯高帕斯（Scopus）

摘要

The evolution of the surface morphology and microstructures of Ge quantum dots (QD) on Si (001) during Si overgrowth was investigated. With increasing Si coverage to 28 eq-monolayers (ML), the uncapped Ge QDs were found to change their shapes from bimodal system to truncated pyramids and eventually to the nanorings. The results show that the formation of nanorings is closely correlated with a strain-driven process. It was found that the nanoring could be controlled by varying the composition of capping layers.

原文	英語
頁（從 - 到）	5283-5285
頁數	3
期刊	Applied Physics Letters
卷	83
發行號	25
DOIs	https://doi.org/10.1063/1.1635073
出版狀態	已發佈 - 2003 12月 22

ASJC Scopus subject areas

物理與天文學（雜項）

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title = "Self-assembled nanorings in Si-capped Ge quantum dots on (001)Si",

abstract = "The evolution of the surface morphology and microstructures of Ge quantum dots (QD) on Si (001) during Si overgrowth was investigated. With increasing Si coverage to 28 eq-monolayers (ML), the uncapped Ge QDs were found to change their shapes from bimodal system to truncated pyramids and eventually to the nanorings. The results show that the formation of nanorings is closely correlated with a strain-driven process. It was found that the nanoring could be controlled by varying the composition of capping layers.",

author = "Lee, {S. W.} and Chen, {L. J.} and Chen, {P. S.} and Tsai, {M. J.} and Liu, {C. W.} and Chien, {T. Y.} and Chia, {C. T.}",

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AU - Lee, S. W.

AU - Chen, L. J.

AU - Chen, P. S.

AU - Tsai, M. J.

AU - Liu, C. W.

AU - Chien, T. Y.

AU - Chia, C. T.

PY - 2003/12/22

Y1 - 2003/12/22

N2 - The evolution of the surface morphology and microstructures of Ge quantum dots (QD) on Si (001) during Si overgrowth was investigated. With increasing Si coverage to 28 eq-monolayers (ML), the uncapped Ge QDs were found to change their shapes from bimodal system to truncated pyramids and eventually to the nanorings. The results show that the formation of nanorings is closely correlated with a strain-driven process. It was found that the nanoring could be controlled by varying the composition of capping layers.

AB - The evolution of the surface morphology and microstructures of Ge quantum dots (QD) on Si (001) during Si overgrowth was investigated. With increasing Si coverage to 28 eq-monolayers (ML), the uncapped Ge QDs were found to change their shapes from bimodal system to truncated pyramids and eventually to the nanorings. The results show that the formation of nanorings is closely correlated with a strain-driven process. It was found that the nanoring could be controlled by varying the composition of capping layers.

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JF - Applied Physics Letters

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Self-assembled nanorings in Si-capped Ge quantum dots on (001)Si

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