Self-assembled nanorings in Si-capped Ge quantum dots on (001)Si

S. W. Lee, L. J. Chen, P. S. Chen, M. J. Tsai, C. W. Liu, T. Y. Chien, C. T. Chia

研究成果: 雜誌貢獻文章

54 引文 斯高帕斯(Scopus)

摘要

The evolution of the surface morphology and microstructures of Ge quantum dots (QD) on Si (001) during Si overgrowth was investigated. With increasing Si coverage to 28 eq-monolayers (ML), the uncapped Ge QDs were found to change their shapes from bimodal system to truncated pyramids and eventually to the nanorings. The results show that the formation of nanorings is closely correlated with a strain-driven process. It was found that the nanoring could be controlled by varying the composition of capping layers.

原文英語
頁(從 - 到)5283-5285
頁數3
期刊Applied Physics Letters
83
發行號25
DOIs
出版狀態已發佈 - 2003 十二月 22

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Lee, S. W., Chen, L. J., Chen, P. S., Tsai, M. J., Liu, C. W., Chien, T. Y., & Chia, C. T. (2003). Self-assembled nanorings in Si-capped Ge quantum dots on (001)Si. Applied Physics Letters, 83(25), 5283-5285. https://doi.org/10.1063/1.1635073