Schottky-barrier resistive memory with highly uniform switching

C. H. Cheng

doi:10.1166/jnn.2014.8723

Schottky-barrier resistive memory with highly uniform switching

C. H. Cheng^*

^*此作品的通信作者

機電工程學系

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

4 引文斯高帕斯（Scopus）

摘要

Using stacked GeO/SrTiO resistive memory with high-work-function Ni electrode, forming-free switching, low sub-μW power and highly uniform current distributions (on-off ratio >1000×) are realized. The Schottky barrier at Ni/GeO_x interface and current compliance function can effectively stabilize electron hopping between oxygen vacancies to reach uniform voltage and current distributions under a sub-μW operating power.

原文	英語
頁（從 - 到）	5166-5170
頁數	5
期刊	Journal of Nanoscience and Nanotechnology
卷	14
發行號	7
DOIs	https://doi.org/10.1166/jnn.2014.8723
出版狀態	已發佈 - 2014 7月

ASJC Scopus subject areas

生物工程
一般化學
生物醫學工程
一般材料科學
凝聚態物理學

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10.1166/jnn.2014.8723

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引用此

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title = "Schottky-barrier resistive memory with highly uniform switching",

abstract = "Using stacked GeO/SrTiO resistive memory with high-work-function Ni electrode, forming-free switching, low sub-μW power and highly uniform current distributions (on-off ratio >1000×) are realized. The Schottky barrier at Ni/GeOx interface and current compliance function can effectively stabilize electron hopping between oxygen vacancies to reach uniform voltage and current distributions under a sub-μW operating power.",

keywords = "Hopping Conduction, Resistive Random Access Memory (RRAM), Schottky Barrier",

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AB - Using stacked GeO/SrTiO resistive memory with high-work-function Ni electrode, forming-free switching, low sub-μW power and highly uniform current distributions (on-off ratio >1000×) are realized. The Schottky barrier at Ni/GeOx interface and current compliance function can effectively stabilize electron hopping between oxygen vacancies to reach uniform voltage and current distributions under a sub-μW operating power.

KW - Hopping Conduction

KW - Resistive Random Access Memory (RRAM)

KW - Schottky Barrier

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UR - https://www.scopus.com/pages/publications/84903844099#tab=citedBy

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Schottky-barrier resistive memory with highly uniform switching

摘要

ASJC Scopus subject areas

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