Schottky-barrier resistive memory with highly uniform switching

C. H. Cheng

doi:10.1166/jnn.2014.8723

Schottky-barrier resistive memory with highly uniform switching

C. H. Cheng^*

^*此作品的通信作者

機電工程學系

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

4 引文斯高帕斯（Scopus）

摘要

Using stacked GeO/SrTiO resistive memory with high-work-function Ni electrode, forming-free switching, low sub-μW power and highly uniform current distributions (on-off ratio >1000×) are realized. The Schottky barrier at Ni/GeO_x interface and current compliance function can effectively stabilize electron hopping between oxygen vacancies to reach uniform voltage and current distributions under a sub-μW operating power.

原文	英語
頁（從 - 到）	5166-5170
頁數	5
期刊	Journal of Nanoscience and Nanotechnology
卷	14
發行號	7
DOIs	https://doi.org/10.1166/jnn.2014.8723
出版狀態	已發佈 - 2014 7月

ASJC Scopus subject areas

生物工程
一般化學
生物醫學工程
一般材料科學
凝聚態物理學

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10.1166/jnn.2014.8723

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@article{4cbad10e670749948400f953a7655f9b,

title = "Schottky-barrier resistive memory with highly uniform switching",

abstract = "Using stacked GeO/SrTiO resistive memory with high-work-function Ni electrode, forming-free switching, low sub-μW power and highly uniform current distributions (on-off ratio >1000×) are realized. The Schottky barrier at Ni/GeOx interface and current compliance function can effectively stabilize electron hopping between oxygen vacancies to reach uniform voltage and current distributions under a sub-μW operating power.",

keywords = "Hopping Conduction, Resistive Random Access Memory (RRAM), Schottky Barrier",

author = "Cheng, {C. H.}",

year = "2014",

month = jul,

doi = "10.1166/jnn.2014.8723",

language = "English",

volume = "14",

pages = "5166--5170",

journal = "Journal of Nanoscience and Nanotechnology",

issn = "1533-4880",

publisher = "American Scientific Publishers",

number = "7",

}

TY - JOUR

T1 - Schottky-barrier resistive memory with highly uniform switching

AU - Cheng, C. H.

PY - 2014/7

Y1 - 2014/7

N2 - Using stacked GeO/SrTiO resistive memory with high-work-function Ni electrode, forming-free switching, low sub-μW power and highly uniform current distributions (on-off ratio >1000×) are realized. The Schottky barrier at Ni/GeOx interface and current compliance function can effectively stabilize electron hopping between oxygen vacancies to reach uniform voltage and current distributions under a sub-μW operating power.

AB - Using stacked GeO/SrTiO resistive memory with high-work-function Ni electrode, forming-free switching, low sub-μW power and highly uniform current distributions (on-off ratio >1000×) are realized. The Schottky barrier at Ni/GeOx interface and current compliance function can effectively stabilize electron hopping between oxygen vacancies to reach uniform voltage and current distributions under a sub-μW operating power.

KW - Hopping Conduction

KW - Resistive Random Access Memory (RRAM)

KW - Schottky Barrier

UR - http://www.scopus.com/inward/record.url?scp=84903844099&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84903844099&partnerID=8YFLogxK

U2 - 10.1166/jnn.2014.8723

DO - 10.1166/jnn.2014.8723

M3 - Article

AN - SCOPUS:84903844099

SN - 1533-4880

VL - 14

SP - 5166

EP - 5170

JO - Journal of Nanoscience and Nanotechnology

JF - Journal of Nanoscience and Nanotechnology

IS - 7

ER -

Schottky-barrier resistive memory with highly uniform switching

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ASJC Scopus subject areas

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