Schottky-barrier resistive memory with highly uniform switching

C. H. Cheng*

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

3 引文 斯高帕斯(Scopus)

摘要

Using stacked GeO/SrTiO resistive memory with high-work-function Ni electrode, forming-free switching, low sub-μW power and highly uniform current distributions (on-off ratio >1000×) are realized. The Schottky barrier at Ni/GeOx interface and current compliance function can effectively stabilize electron hopping between oxygen vacancies to reach uniform voltage and current distributions under a sub-μW operating power.

原文英語
頁(從 - 到)5166-5170
頁數5
期刊Journal of Nanoscience and Nanotechnology
14
發行號7
DOIs
出版狀態已發佈 - 2014

ASJC Scopus subject areas

  • 生物工程
  • 化學 (全部)
  • 生物醫學工程
  • 材料科學(全部)
  • 凝聚態物理學

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