Scanning tunneling microscopy and spectroscopy of the electronic structure of dislocations in GaN/Si(111) grown by molecular-beam epitaxy

Ya Ping Chiu*, Bo Chih Chen, Bo Chao Huang, Min Chuan Shih, Li Wei Tu

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

9 引文 斯高帕斯(Scopus)

摘要

By using cross-sectional scanning tunneling microscopy, a correlation between the surface morphology and the corresponding electronic states of the dislocations terminated at the GaN (1̄100) cleavage surfaces grown by molecular-beam epitaxy has been demonstrated. Both scanning tunneling spectroscopy and analysis of the dislocations on electronic structures suggest that regions surrounding dislocations register gap states in the fundamental band gap of GaN. Closely examining the recognition of the electronic structure reveals that the defect levels could provide the possibility of yellow luminescence, involving a transition from the conduction-band edge to a level at 1.2 eV above the valence band edge.

原文英語
文章編號082107
期刊Applied Physics Letters
96
發行號8
DOIs
出版狀態已發佈 - 2010

ASJC Scopus subject areas

  • 物理與天文學(雜項)

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