Scalable fabrication of a complementary logic inverter based on MoS₂ fin-shaped field effect transistors

Integration of high performance n-type and p-type field-effect transistors with complementary device operation in the same kind of layered materials is highly desirable for pursuing low power and flexible next-generation electronics. In this work, we have shown a well-mannered growth of MoS₂ on a fin-shaped oxide structure and integration of both n-type and p-type MoS₂ by using a traditional implantation technique. With the advance of the fin-shaped structure, the maxima and the effective ON current density for the MoS₂ fin-shaped field-effect transistors are respectively obtained to be about 50 μA μm^-1 (normalized by the circumference of the fin) and around 500 μA μm^-1 (only normalized by the fin size), while its ON/OFF ratio is more than 10⁶ with low OFF current of a few pA. Based on our n-type and p-type MoS₂ fin-shaped field-effect transistors, the complementary MoS₂ inverter with a high DC voltage gain of more than 20 is acquired. Our results provide evidence for complementary 2D material operation in the same materials, a promising avenue for the development of high performance and high-density complementary 2D electronic devices.