Roughness-enhanced reliability of MOS tunneling diodes

C. H. Lin*, F. Yuan, C. R. Shie, K. F. Chen, B. C. Hsu, M. H. Lee, W. W. Pai, C. W. Liu

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

6 引文 斯高帕斯(Scopus)

摘要

Both electrical and optical reliabilities of PMOS and NMOS tunneling diodes are enhanced by oxide roughness, prepared by very high vacuum prebake technology. For the rough PMOS devices, as compared to the flat PMOS devices, the Weibull plot of T BD shows 2.5-fold enhancement at 63% failure rate, while both the D 2 and H 2-treated flat PMOS devices show similar inferior reliability. For the rough NMOS devices, as compared to the flat NMOS devices, the Weibull plot of T BD shows 4.9-fold enhancement at 63% failure rate. The time evolutions of the light emission from the rough PMOS and NMOS diodes degrade much less than those of the flat PMOS and NMOS diodes. The momentum reduction perpendicular to the Si/SiO 2 interface by roughness scattering could possibly make it difficult to form defects in the bulk oxide and at the Si/SiO 2 interface by the impact of the energetic electrons and holes.

原文英語
頁(從 - 到)431-433
頁數3
期刊IEEE Electron Device Letters
23
發行號7
DOIs
出版狀態已發佈 - 2002 七月
對外發佈

ASJC Scopus subject areas

  • 電子、光磁材料
  • 電氣與電子工程

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