Roughness-enhanced electroluminescence from metal oxide silicon tunneling diodes

C. W. Liu; M. H. Lee; Miin Jang Chen; Ching Fuh Lin; M. Y. Chern

doi:10.1109/55.887479

Roughness-enhanced electroluminescence from metal oxide silicon tunneling diodes

C. W. Liu^*
, M. H. Lee
, Miin Jang Chen
, Ching Fuh Lin
, M. Y. Chern

^*此作品的通信作者

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

39 引文斯高帕斯（Scopus）

摘要

An approximate two-order increase in magnitude in electroluminescence was observed for the metal-oxide-silicon tunneling diodes with oxide grown at 900 °C, as compared to 1000 °C. The x-ray reflectivity revealed that the oxide grown at 900 °C has rougher interface than that grown at 1000 °C. The role of interface roughness can be understood in a model composed of phonons and interface roughness. An external quantum efficiency of approximately 10^-6 was obtained using Al electrodes.

原文	英語
頁（從 - 到）	601-603
頁數	3
期刊	IEEE Electron Device Letters
卷	21
發行號	12
DOIs	https://doi.org/10.1109/55.887479
出版狀態	已發佈 - 2000 12月
對外發佈	是

ASJC Scopus subject areas

電子、光磁材料
電氣與電子工程

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title = "Roughness-enhanced electroluminescence from metal oxide silicon tunneling diodes",

abstract = "An approximate two-order increase in magnitude in electroluminescence was observed for the metal-oxide-silicon tunneling diodes with oxide grown at 900 °C, as compared to 1000 °C. The x-ray reflectivity revealed that the oxide grown at 900 °C has rougher interface than that grown at 1000 °C. The role of interface roughness can be understood in a model composed of phonons and interface roughness. An external quantum efficiency of approximately 10-6 was obtained using Al electrodes.",

author = "Liu, \{C. W.\} and Lee, \{M. H.\} and Chen, \{Miin Jang\} and Lin, \{Ching Fuh\} and Chern, \{M. Y.\}",

note = "Funding Information: Manuscript received July 31, 2000. This work was supported by National Science Council, Taiwan, R.O.C., under Contracts 89-2218-E-002-017 and 89-2112-M-002-034, and by the Tjing Ling Foundation.The review of this letter was arranged by Editor E. Sangiorgi.",

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doi = "10.1109/55.887479",

language = "English",

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AU - Liu, C. W.

AU - Lee, M. H.

AU - Chen, Miin Jang

AU - Lin, Ching Fuh

AU - Chern, M. Y.

N1 - Funding Information: Manuscript received July 31, 2000. This work was supported by National Science Council, Taiwan, R.O.C., under Contracts 89-2218-E-002-017 and 89-2112-M-002-034, and by the Tjing Ling Foundation.The review of this letter was arranged by Editor E. Sangiorgi.

PY - 2000/12

Y1 - 2000/12

N2 - An approximate two-order increase in magnitude in electroluminescence was observed for the metal-oxide-silicon tunneling diodes with oxide grown at 900 °C, as compared to 1000 °C. The x-ray reflectivity revealed that the oxide grown at 900 °C has rougher interface than that grown at 1000 °C. The role of interface roughness can be understood in a model composed of phonons and interface roughness. An external quantum efficiency of approximately 10-6 was obtained using Al electrodes.

AB - An approximate two-order increase in magnitude in electroluminescence was observed for the metal-oxide-silicon tunneling diodes with oxide grown at 900 °C, as compared to 1000 °C. The x-ray reflectivity revealed that the oxide grown at 900 °C has rougher interface than that grown at 1000 °C. The role of interface roughness can be understood in a model composed of phonons and interface roughness. An external quantum efficiency of approximately 10-6 was obtained using Al electrodes.

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JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

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Roughness-enhanced electroluminescence from metal oxide silicon tunneling diodes

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