@article{87308304e8c2497795998d889222506e,
title = "Roughness-enhanced electroluminescence from metal oxide silicon tunneling diodes",
abstract = "An approximate two-order increase in magnitude in electroluminescence was observed for the metal-oxide-silicon tunneling diodes with oxide grown at 900 °C, as compared to 1000 °C. The x-ray reflectivity revealed that the oxide grown at 900 °C has rougher interface than that grown at 1000 °C. The role of interface roughness can be understood in a model composed of phonons and interface roughness. An external quantum efficiency of approximately 10-6 was obtained using Al electrodes.",
author = "Liu, {C. W.} and Lee, {M. H.} and Chen, {Miin Jang} and Lin, {Ching Fuh} and Chern, {M. Y.}",
note = "Funding Information: Manuscript received July 31, 2000. This work was supported by National Science Council, Taiwan, R.O.C., under Contracts 89-2218-E-002-017 and 89-2112-M-002-034, and by the Tjing Ling Foundation.The review of this letter was arranged by Editor E. Sangiorgi.",
year = "2000",
month = dec,
doi = "10.1109/55.887479",
language = "English",
volume = "21",
pages = "601--603",
journal = "IEEE Electron Device Letters",
issn = "0741-3106",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "12",
}