Roughness-enhanced electroluminescence from metal oxide silicon tunneling diodes

C. W. Liu*, M. H. Lee, Miin Jang Chen, Ching Fuh Lin, M. Y. Chern

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

38 引文 斯高帕斯(Scopus)

摘要

An approximate two-order increase in magnitude in electroluminescence was observed for the metal-oxide-silicon tunneling diodes with oxide grown at 900 °C, as compared to 1000 °C. The x-ray reflectivity revealed that the oxide grown at 900 °C has rougher interface than that grown at 1000 °C. The role of interface roughness can be understood in a model composed of phonons and interface roughness. An external quantum efficiency of approximately 10-6 was obtained using Al electrodes.

原文英語
頁(從 - 到)601-603
頁數3
期刊IEEE Electron Device Letters
21
發行號12
DOIs
出版狀態已發佈 - 2000 十二月
對外發佈

ASJC Scopus subject areas

  • 電子、光磁材料
  • 電氣與電子工程

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