Room temperature two-terminal characteristics in silicon nanowires

S. F. Hu*, W. Z. Wong, S. S. Liu, Y. C. Wu, C. L. Sung, T. Y. Huang

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

18 引文 斯高帕斯(Scopus)

摘要

Quantum effects in silicon nanowires due to one-dimensional carrier confinement were observed at room temperature. Electrical transport properties were measured on narrow thin-silicon-on-insulator wires that were defined by e-beam lithography and further narrowed and thinned down by oxidation to a final thickness of around 3 nm, and a width of 29 nm. The room temperature current-voltage characteristics of the resulting silicon nanowires are shown to exhibit a zero current state may be due to the occurrence of Coulomb blockade.

原文英語
頁(從 - 到)351-354
頁數4
期刊Solid State Communications
125
發行號6
DOIs
出版狀態已發佈 - 2003 二月

ASJC Scopus subject areas

  • 化學 (全部)
  • 凝聚態物理學
  • 材料化學

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