Room-temperature two-terminal characteristics in silicon nano wires

S. F. Hu*, W. Z. Wong, S. S. Liu, Y. G. Wu, C. L. Sung, T. Y. Huang, S. M. Sze

*此作品的通信作者

研究成果: 書貢獻/報告類型會議論文篇章

摘要

Quantum effects in silicon nano wires due to 1-dimensional carrier confinement were observed at room temperature. Electrical transport properties were measured on narrow thin-silicon-on-insulator wires that were defined by e-beam lithography and further narrowed and thinned down by oxidation to a final thickness of around 3 nm, and a width of 29 nm. The room-temperature current-voltage characteristics of the resulting silicon nano wires were shown to exhibit a zero current state may be due to the occurrence of Coulomb blockade.

原文英語
主出版物標題Proceedings of the 2002 2nd IEEE Conference on Nanotechnology, IEEE-NANO 2002
發行者IEEE Computer Society
頁面55-58
頁數4
ISBN(電子)0780375386
DOIs
出版狀態已發佈 - 2002
事件2nd IEEE Conference on Nanotechnology, IEEE-NANO 2002 - Washington, 美国
持續時間: 2002 八月 262002 八月 28

出版系列

名字Proceedings of the IEEE Conference on Nanotechnology
2002-January
ISSN(列印)1944-9399
ISSN(電子)1944-9380

其他

其他2nd IEEE Conference on Nanotechnology, IEEE-NANO 2002
國家/地區美国
城市Washington
期間2002/08/262002/08/28

ASJC Scopus subject areas

  • 生物工程
  • 電氣與電子工程
  • 材料化學
  • 凝聚態物理學

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