Room-temperature tunneling magnetoresistance in La0.7Sr 0.3MnO3 step-edge junctions

L. M. Wang; Chen Chung Liu; H. C. Yang; H. E. Horng

doi:10.1063/1.1687994

Room-temperature tunneling magnetoresistance in La_0.7Sr _0.3MnO₃ step-edge junctions

L. M. Wang^*, Chen Chung Liu, H. C. Yang, H. E. Horng

^*此作品的通信作者

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

16 引文斯高帕斯（Scopus）

摘要

La_0.7Sr_0.3MnO₃ (LSMO) step-edge junctions were fabricated on step-edge (001) SrTiO₃ substrates. Above room temperature (RT) the step-edge junctions showed vanishing tunneling magnetoresistance (TMR) spikes in R(H) curves. To study the conduction mechanism of polarized electrons accross grain boundaries the MR ratio and the dynamic conduction at various temperatures was measured. The results show that tunneling is the dominating mechanism and the charge carriers at the surface boundary govern the tunneling conductivity.

原文	英語
頁（從 - 到）	4928-4933
頁數	6
期刊	Journal of Applied Physics
卷	95
發行號	9
DOIs	https://doi.org/10.1063/1.1687994
出版狀態	已發佈 - 2004 5月 1
對外發佈	是

ASJC Scopus subject areas

物理與天文學 (全部)

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10.1063/1.1687994

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abstract = "La0.7Sr0.3MnO3 (LSMO) step-edge junctions were fabricated on step-edge (001) SrTiO3 substrates. Above room temperature (RT) the step-edge junctions showed vanishing tunneling magnetoresistance (TMR) spikes in R(H) curves. To study the conduction mechanism of polarized electrons accross grain boundaries the MR ratio and the dynamic conduction at various temperatures was measured. The results show that tunneling is the dominating mechanism and the charge carriers at the surface boundary govern the tunneling conductivity.",

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AU - Wang, L. M.

AU - Liu, Chen Chung

AU - Yang, H. C.

AU - Horng, H. E.

PY - 2004/5/1

Y1 - 2004/5/1

N2 - La0.7Sr0.3MnO3 (LSMO) step-edge junctions were fabricated on step-edge (001) SrTiO3 substrates. Above room temperature (RT) the step-edge junctions showed vanishing tunneling magnetoresistance (TMR) spikes in R(H) curves. To study the conduction mechanism of polarized electrons accross grain boundaries the MR ratio and the dynamic conduction at various temperatures was measured. The results show that tunneling is the dominating mechanism and the charge carriers at the surface boundary govern the tunneling conductivity.

AB - La0.7Sr0.3MnO3 (LSMO) step-edge junctions were fabricated on step-edge (001) SrTiO3 substrates. Above room temperature (RT) the step-edge junctions showed vanishing tunneling magnetoresistance (TMR) spikes in R(H) curves. To study the conduction mechanism of polarized electrons accross grain boundaries the MR ratio and the dynamic conduction at various temperatures was measured. The results show that tunneling is the dominating mechanism and the charge carriers at the surface boundary govern the tunneling conductivity.

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Room-temperature tunneling magnetoresistance in La0.7Sr 0.3MnO3 step-edge junctions

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Room-temperature tunneling magnetoresistance in La_0.7Sr _0.3MnO₃ step-edge junctions