Room-temperature tunneling magnetoresistance in La0.7Sr 0.3MnO3 step-edge junctions

L. M. Wang*, Chen Chung Liu, H. C. Yang, H. E. Horng

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

16 引文 斯高帕斯(Scopus)

摘要

La0.7Sr0.3MnO3 (LSMO) step-edge junctions were fabricated on step-edge (001) SrTiO3 substrates. Above room temperature (RT) the step-edge junctions showed vanishing tunneling magnetoresistance (TMR) spikes in R(H) curves. To study the conduction mechanism of polarized electrons accross grain boundaries the MR ratio and the dynamic conduction at various temperatures was measured. The results show that tunneling is the dominating mechanism and the charge carriers at the surface boundary govern the tunneling conductivity.

原文英語
頁(從 - 到)4928-4933
頁數6
期刊Journal of Applied Physics
95
發行號9
DOIs
出版狀態已發佈 - 2004 五月 1

ASJC Scopus subject areas

  • 物理與天文學 (全部)

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