Room-temperature stability study in silicon base magnetic tunneling transistor

Y. W. Huang; C. K. Lo; Y. D. Yao; L. C. Hsieh; D. R. Huang

doi:10.1109/TMAG.2005.855293

Room-temperature stability study in silicon base magnetic tunneling transistor

Y. W. Huang^*
, C. K. Lo
, Y. D. Yao
, L. C. Hsieh
, D. R. Huang

^*此作品的通信作者

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

2 引文斯高帕斯（Scopus）

摘要

A spin tunneling transistor (STT) was designed by growing a magnetic tunneling junction (MTJ) on a p-n junction. The magnetocurrent (MC) ratio of the collector can be stabilized roughly above 40% at V_E = 1.25 ± 0.25 V with the transfer ratio (I_C / I_E) of 2.88%, while the transistor is operated in the common collector circuitry with an emitter bias and a base resistor at room temperature. The output current can be more than 4 μA when the magnetic moment of the base layer is oriented parallel to that of the emitter layer. The high performance is achieved mainly due to the base resistor, which can push our STT to the right working region and enlarge the MC ratio of the collector.

原文	英語
頁（從 - 到）	2682-2684
頁數	3
期刊	IEEE Transactions on Magnetics
卷	41
發行號	10
DOIs	https://doi.org/10.1109/TMAG.2005.855293
出版狀態	已發佈 - 2005 10月
對外發佈	是

ASJC Scopus subject areas

電子、光磁材料
電氣與電子工程

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10.1109/TMAG.2005.855293

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引用此

@article{935badc05d2d4889bcf9e0c8c5e3a406,

title = "Room-temperature stability study in silicon base magnetic tunneling transistor",

abstract = "A spin tunneling transistor (STT) was designed by growing a magnetic tunneling junction (MTJ) on a p-n junction. The magnetocurrent (MC) ratio of the collector can be stabilized roughly above 40\% at VE = 1.25 ± 0.25 V with the transfer ratio (IC / IE) of 2.88\%, while the transistor is operated in the common collector circuitry with an emitter bias and a base resistor at room temperature. The output current can be more than 4 μA when the magnetic moment of the base layer is oriented parallel to that of the emitter layer. The high performance is achieved mainly due to the base resistor, which can push our STT to the right working region and enlarge the MC ratio of the collector.",

keywords = "Magnetic tunneling, P-n junction, Stability, Transistor",

author = "Huang, \{Y. W.\} and Lo, \{C. K.\} and Yao, \{Y. D.\} and Hsieh, \{L. C.\} and Huang, \{D. R.\}",

note = "Funding Information: This work was supported in part by the Academia Sinica Grant MOEA A331XS3710 and NSC 94-2120-M-001-004. The authors would like to acknowledge the technical support from the Nano Technology Research Center, ITRI.",

year = "2005",

month = oct,

doi = "10.1109/TMAG.2005.855293",

language = "English",

volume = "41",

pages = "2682--2684",

journal = "IEEE Transactions on Magnetics",

issn = "0018-9464",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "10",

}

TY - JOUR

T1 - Room-temperature stability study in silicon base magnetic tunneling transistor

AU - Huang, Y. W.

AU - Lo, C. K.

AU - Yao, Y. D.

AU - Hsieh, L. C.

AU - Huang, D. R.

N1 - Funding Information: This work was supported in part by the Academia Sinica Grant MOEA A331XS3710 and NSC 94-2120-M-001-004. The authors would like to acknowledge the technical support from the Nano Technology Research Center, ITRI.

PY - 2005/10

Y1 - 2005/10

N2 - A spin tunneling transistor (STT) was designed by growing a magnetic tunneling junction (MTJ) on a p-n junction. The magnetocurrent (MC) ratio of the collector can be stabilized roughly above 40% at VE = 1.25 ± 0.25 V with the transfer ratio (IC / IE) of 2.88%, while the transistor is operated in the common collector circuitry with an emitter bias and a base resistor at room temperature. The output current can be more than 4 μA when the magnetic moment of the base layer is oriented parallel to that of the emitter layer. The high performance is achieved mainly due to the base resistor, which can push our STT to the right working region and enlarge the MC ratio of the collector.

AB - A spin tunneling transistor (STT) was designed by growing a magnetic tunneling junction (MTJ) on a p-n junction. The magnetocurrent (MC) ratio of the collector can be stabilized roughly above 40% at VE = 1.25 ± 0.25 V with the transfer ratio (IC / IE) of 2.88%, while the transistor is operated in the common collector circuitry with an emitter bias and a base resistor at room temperature. The output current can be more than 4 μA when the magnetic moment of the base layer is oriented parallel to that of the emitter layer. The high performance is achieved mainly due to the base resistor, which can push our STT to the right working region and enlarge the MC ratio of the collector.

KW - Magnetic tunneling

KW - P-n junction

KW - Stability

KW - Transistor

UR - https://www.scopus.com/pages/publications/27744476519

UR - https://www.scopus.com/pages/publications/27744476519#tab=citedBy

U2 - 10.1109/TMAG.2005.855293

DO - 10.1109/TMAG.2005.855293

M3 - Article

AN - SCOPUS:27744476519

SN - 0018-9464

VL - 41

SP - 2682

EP - 2684

JO - IEEE Transactions on Magnetics

JF - IEEE Transactions on Magnetics

IS - 10

ER -

Room-temperature stability study in silicon base magnetic tunneling transistor

摘要

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