Room-temperature stability study in silicon base magnetic tunneling transistor

Y. W. Huang, Chi-Kuen Lo, Y. D. Yao, L. C. Hsieh, D. R. Huang

研究成果: 雜誌貢獻文章

2 引文 (Scopus)

摘要

A spin tunneling transistor (STT) was designed by growing a magnetic tunneling junction (MTJ) on a p-n junction. The magnetocurrent (MC) ratio of the collector can be stabilized roughly above 40% at VE = 1.25 ± 0.25 V with the transfer ratio (IC / IE) of 2.88%, while the transistor is operated in the common collector circuitry with an emitter bias and a base resistor at room temperature. The output current can be more than 4 μA when the magnetic moment of the base layer is oriented parallel to that of the emitter layer. The high performance is achieved mainly due to the base resistor, which can push our STT to the right working region and enlarge the MC ratio of the collector.

原文英語
頁(從 - 到)2682-2684
頁數3
期刊IEEE Transactions on Magnetics
41
發行號10
DOIs
出版狀態已發佈 - 2005 十月 1

指紋

Silicon
Transistors
Resistors
Magnetic moments
Temperature

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

引用此文

Room-temperature stability study in silicon base magnetic tunneling transistor. / Huang, Y. W.; Lo, Chi-Kuen; Yao, Y. D.; Hsieh, L. C.; Huang, D. R.

於: IEEE Transactions on Magnetics, 卷 41, 編號 10, 01.10.2005, p. 2682-2684.

研究成果: 雜誌貢獻文章

Huang, Y. W. ; Lo, Chi-Kuen ; Yao, Y. D. ; Hsieh, L. C. ; Huang, D. R. / Room-temperature stability study in silicon base magnetic tunneling transistor. 於: IEEE Transactions on Magnetics. 2005 ; 卷 41, 編號 10. 頁 2682-2684.
@article{c5f7ca2dd7134110a5f0f122b7a9b55d,
title = "Room-temperature stability study in silicon base magnetic tunneling transistor",
abstract = "A spin tunneling transistor (STT) was designed by growing a magnetic tunneling junction (MTJ) on a p-n junction. The magnetocurrent (MC) ratio of the collector can be stabilized roughly above 40{\%} at VE = 1.25 ± 0.25 V with the transfer ratio (IC / IE) of 2.88{\%}, while the transistor is operated in the common collector circuitry with an emitter bias and a base resistor at room temperature. The output current can be more than 4 μA when the magnetic moment of the base layer is oriented parallel to that of the emitter layer. The high performance is achieved mainly due to the base resistor, which can push our STT to the right working region and enlarge the MC ratio of the collector.",
keywords = "Magnetic tunneling, P-n junction, Stability, Transistor",
author = "Huang, {Y. W.} and Chi-Kuen Lo and Yao, {Y. D.} and Hsieh, {L. C.} and Huang, {D. R.}",
year = "2005",
month = "10",
day = "1",
doi = "10.1109/TMAG.2005.855293",
language = "English",
volume = "41",
pages = "2682--2684",
journal = "IEEE Transactions on Magnetics",
issn = "0018-9464",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "10",

}

TY - JOUR

T1 - Room-temperature stability study in silicon base magnetic tunneling transistor

AU - Huang, Y. W.

AU - Lo, Chi-Kuen

AU - Yao, Y. D.

AU - Hsieh, L. C.

AU - Huang, D. R.

PY - 2005/10/1

Y1 - 2005/10/1

N2 - A spin tunneling transistor (STT) was designed by growing a magnetic tunneling junction (MTJ) on a p-n junction. The magnetocurrent (MC) ratio of the collector can be stabilized roughly above 40% at VE = 1.25 ± 0.25 V with the transfer ratio (IC / IE) of 2.88%, while the transistor is operated in the common collector circuitry with an emitter bias and a base resistor at room temperature. The output current can be more than 4 μA when the magnetic moment of the base layer is oriented parallel to that of the emitter layer. The high performance is achieved mainly due to the base resistor, which can push our STT to the right working region and enlarge the MC ratio of the collector.

AB - A spin tunneling transistor (STT) was designed by growing a magnetic tunneling junction (MTJ) on a p-n junction. The magnetocurrent (MC) ratio of the collector can be stabilized roughly above 40% at VE = 1.25 ± 0.25 V with the transfer ratio (IC / IE) of 2.88%, while the transistor is operated in the common collector circuitry with an emitter bias and a base resistor at room temperature. The output current can be more than 4 μA when the magnetic moment of the base layer is oriented parallel to that of the emitter layer. The high performance is achieved mainly due to the base resistor, which can push our STT to the right working region and enlarge the MC ratio of the collector.

KW - Magnetic tunneling

KW - P-n junction

KW - Stability

KW - Transistor

UR - http://www.scopus.com/inward/record.url?scp=27744476519&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=27744476519&partnerID=8YFLogxK

U2 - 10.1109/TMAG.2005.855293

DO - 10.1109/TMAG.2005.855293

M3 - Article

AN - SCOPUS:27744476519

VL - 41

SP - 2682

EP - 2684

JO - IEEE Transactions on Magnetics

JF - IEEE Transactions on Magnetics

SN - 0018-9464

IS - 10

ER -