Room-temperature stability study in silicon base magnetic tunneling transistor

Y. W. Huang, C. K. Lo, Y. D. Yao, L. C. Hsieh, D. R. Huang

研究成果: 雜誌貢獻期刊論文同行評審

2 引文 斯高帕斯(Scopus)


A spin tunneling transistor (STT) was designed by growing a magnetic tunneling junction (MTJ) on a p-n junction. The magnetocurrent (MC) ratio of the collector can be stabilized roughly above 40% at VE = 1.25 ± 0.25 V with the transfer ratio (IC / IE) of 2.88%, while the transistor is operated in the common collector circuitry with an emitter bias and a base resistor at room temperature. The output current can be more than 4 μA when the magnetic moment of the base layer is oriented parallel to that of the emitter layer. The high performance is achieved mainly due to the base resistor, which can push our STT to the right working region and enlarge the MC ratio of the collector.

頁(從 - 到)2682-2684
期刊IEEE Transactions on Magnetics
出版狀態已發佈 - 2005 十月

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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