TY - JOUR
T1 - Room-temperature flexible thin film transistor with high mobility
AU - Hsu, Hsiao Hsuan
AU - Chang, Chun Yen
AU - Cheng, Chun Hu
PY - 2013
Y1 - 2013
N2 - We report a room-temperature and high-mobility InGaZnO thin-film transistor on flexible substrate. To gain both high gate capacitance and low leakage current, we adopt stacked dielectric of Y2O3/TiO 2/Y2O3. This flexible IGZO TFT shows a low threshold voltage of 0.45 V, a small sub-threshold swing of 0.16 V/decade and very high field-effect mobility of 40 cm2/V. Such good performance is mainly contributed by improved gate stack structure and thickness modulation of IGZO channel that reduce the interface trap density without apparent mobility degradation.
AB - We report a room-temperature and high-mobility InGaZnO thin-film transistor on flexible substrate. To gain both high gate capacitance and low leakage current, we adopt stacked dielectric of Y2O3/TiO 2/Y2O3. This flexible IGZO TFT shows a low threshold voltage of 0.45 V, a small sub-threshold swing of 0.16 V/decade and very high field-effect mobility of 40 cm2/V. Such good performance is mainly contributed by improved gate stack structure and thickness modulation of IGZO channel that reduce the interface trap density without apparent mobility degradation.
KW - InGaZnO (igzo)
KW - Thin film transistor (tft)
UR - http://www.scopus.com/inward/record.url?scp=84885636833&partnerID=8YFLogxK
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U2 - 10.1016/j.cap.2013.04.026
DO - 10.1016/j.cap.2013.04.026
M3 - Article
AN - SCOPUS:84885636833
SN - 1567-1739
VL - 13
SP - 1459
EP - 1462
JO - Current Applied Physics
JF - Current Applied Physics
IS - 7
ER -