Room-temperature flexible thin film transistor with high mobility

Hsiao Hsuan Hsu, Chun Yen Chang, Chun-Hu Cheng

    研究成果: 雜誌貢獻文章同行評審

    11 引文 斯高帕斯(Scopus)

    摘要

    We report a room-temperature and high-mobility InGaZnO thin-film transistor on flexible substrate. To gain both high gate capacitance and low leakage current, we adopt stacked dielectric of Y2O3/TiO 2/Y2O3. This flexible IGZO TFT shows a low threshold voltage of 0.45 V, a small sub-threshold swing of 0.16 V/decade and very high field-effect mobility of 40 cm2/V. Such good performance is mainly contributed by improved gate stack structure and thickness modulation of IGZO channel that reduce the interface trap density without apparent mobility degradation.

    原文英語
    頁(從 - 到)1459-1462
    頁數4
    期刊Current Applied Physics
    13
    發行號7
    DOIs
    出版狀態已發佈 - 2013 一月 1

    ASJC Scopus subject areas

    • Materials Science(all)
    • Physics and Astronomy(all)

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