Room-temperature flexible thin film transistor with high mobility

Hsiao Hsuan Hsu, Chun Yen Chang, Chun-Hu Cheng

研究成果: 雜誌貢獻期刊論文同行評審

11 引文 斯高帕斯(Scopus)

摘要

We report a room-temperature and high-mobility InGaZnO thin-film transistor on flexible substrate. To gain both high gate capacitance and low leakage current, we adopt stacked dielectric of Y2O3/TiO 2/Y2O3. This flexible IGZO TFT shows a low threshold voltage of 0.45 V, a small sub-threshold swing of 0.16 V/decade and very high field-effect mobility of 40 cm2/V. Such good performance is mainly contributed by improved gate stack structure and thickness modulation of IGZO channel that reduce the interface trap density without apparent mobility degradation.

原文英語
頁(從 - 到)1459-1462
頁數4
期刊Current Applied Physics
13
發行號7
DOIs
出版狀態已發佈 - 2013 一月 1

ASJC Scopus subject areas

  • 材料科學(全部)
  • 物理與天文學 (全部)

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