Room-temperature ferromagnetism in amorphous In-Ga-Zn-O films fabricated by using pulsed-laser deposition

Shiu Jen Liu; Shih Hao Su; Jenh Yih Juang

doi:10.1007/s00339-014-8263-0

Room-temperature ferromagnetism in amorphous In-Ga-Zn-O films fabricated by using pulsed-laser deposition

Shiu Jen Liu^*
, Shih Hao Su
, Jenh Yih Juang

^*此作品的通信作者

物理學系

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

5 引文斯高帕斯（Scopus）

摘要

Room-temperature ferromagnetism (RTFM) was observed in pulsed-laser deposited amorphous In-Ga-Zn-O (a-IGZO) films undoped with impurities containing unpaired d or f electrons. The presence of oxygen vacancies in the prepared a-IGZO films was verified by X-ray photoelectron spectroscopy and suggested to be responsible for the observed RTFM. The electrical and optical properties of the a-IGZO films were also investigated.

原文	英語
頁（從 - 到）	1473-1476
頁數	4
期刊	Applied Physics A: Materials Science and Processing
卷	116
發行號	3
DOIs	https://doi.org/10.1007/s00339-014-8263-0
出版狀態	已發佈 - 2014 9月

ASJC Scopus subject areas

一般化學
一般材料科學

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10.1007/s00339-014-8263-0

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title = "Room-temperature ferromagnetism in amorphous In-Ga-Zn-O films fabricated by using pulsed-laser deposition",

abstract = "Room-temperature ferromagnetism (RTFM) was observed in pulsed-laser deposited amorphous In-Ga-Zn-O (a-IGZO) films undoped with impurities containing unpaired d or f electrons. The presence of oxygen vacancies in the prepared a-IGZO films was verified by X-ray photoelectron spectroscopy and suggested to be responsible for the observed RTFM. The electrical and optical properties of the a-IGZO films were also investigated.",

author = "Liu, \{Shiu Jen\} and Su, \{Shih Hao\} and Juang, \{Jenh Yih\}",

note = "Funding Information: This work was supported by the National Science Council of Taiwan, under Grant Nos. NSC 101-2112-M-003-007.",

year = "2014",

month = sep,

doi = "10.1007/s00339-014-8263-0",

language = "English",

volume = "116",

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T1 - Room-temperature ferromagnetism in amorphous In-Ga-Zn-O films fabricated by using pulsed-laser deposition

AU - Liu, Shiu Jen

AU - Su, Shih Hao

AU - Juang, Jenh Yih

N1 - Funding Information: This work was supported by the National Science Council of Taiwan, under Grant Nos. NSC 101-2112-M-003-007.

PY - 2014/9

Y1 - 2014/9

N2 - Room-temperature ferromagnetism (RTFM) was observed in pulsed-laser deposited amorphous In-Ga-Zn-O (a-IGZO) films undoped with impurities containing unpaired d or f electrons. The presence of oxygen vacancies in the prepared a-IGZO films was verified by X-ray photoelectron spectroscopy and suggested to be responsible for the observed RTFM. The electrical and optical properties of the a-IGZO films were also investigated.

AB - Room-temperature ferromagnetism (RTFM) was observed in pulsed-laser deposited amorphous In-Ga-Zn-O (a-IGZO) films undoped with impurities containing unpaired d or f electrons. The presence of oxygen vacancies in the prepared a-IGZO films was verified by X-ray photoelectron spectroscopy and suggested to be responsible for the observed RTFM. The electrical and optical properties of the a-IGZO films were also investigated.

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JO - Applied Physics A: Materials Science and Processing

JF - Applied Physics A: Materials Science and Processing

IS - 3

ER -

Room-temperature ferromagnetism in amorphous In-Ga-Zn-O films fabricated by using pulsed-laser deposition

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