TY - JOUR
T1 - Room-temperature ferromagnetism in amorphous In-Ga-Zn-O films fabricated by using pulsed-laser deposition
AU - Liu, Shiu Jen
AU - Su, Shih Hao
AU - Juang, Jenh Yih
N1 - Funding Information:
This work was supported by the National Science Council of Taiwan, under Grant Nos. NSC 101-2112-M-003-007.
PY - 2014/9
Y1 - 2014/9
N2 - Room-temperature ferromagnetism (RTFM) was observed in pulsed-laser deposited amorphous In-Ga-Zn-O (a-IGZO) films undoped with impurities containing unpaired d or f electrons. The presence of oxygen vacancies in the prepared a-IGZO films was verified by X-ray photoelectron spectroscopy and suggested to be responsible for the observed RTFM. The electrical and optical properties of the a-IGZO films were also investigated.
AB - Room-temperature ferromagnetism (RTFM) was observed in pulsed-laser deposited amorphous In-Ga-Zn-O (a-IGZO) films undoped with impurities containing unpaired d or f electrons. The presence of oxygen vacancies in the prepared a-IGZO films was verified by X-ray photoelectron spectroscopy and suggested to be responsible for the observed RTFM. The electrical and optical properties of the a-IGZO films were also investigated.
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U2 - 10.1007/s00339-014-8263-0
DO - 10.1007/s00339-014-8263-0
M3 - Article
AN - SCOPUS:84906322550
SN - 0947-8396
VL - 116
SP - 1473
EP - 1476
JO - Applied Physics A: Materials Science and Processing
JF - Applied Physics A: Materials Science and Processing
IS - 3
ER -